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November 2013
FDB035N10A
N-Channel PowerTrench ? MOSFET
100 V, 214 A, 3.5 m Ω
Features
? R DS(on) = 3.0 m Ω ( Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge, Q G = 89 nC ( Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB035N10A
100
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±20
214*
151*
120
V
A
I DM
Drain Current
- Pulsed
(Note 1)
856
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
658
6.0
333
2.22
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
FDB035N10A
Unit
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max.
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
0.45
62.5
40
o
C/W
?2011 Fairchild Semiconductor Corporation
FDB035N10A Rev. C2
1
www.fairchildsemi.com
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